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參數(shù)資料
| 型號(hào)： | S525T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel MOS-Fieldeffect Triode, Depletion Mode |
| 中文描述： | N溝道馬鞍山- Fieldeffect三極管，耗盡型 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | S525T |
S525T
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (7)
Document Number 85045
N–Channel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
High frequency stages up to 300 MHz.
Features
Integrated gate protection diodes
Low feedback capacitance
Low noise figure
13 581
2
3
1
94 9280
S525T Marking: LB
Plastic case (SOT 23)
1=Source, 2=Gate , 3=Drain
D
S
12624
G
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate-source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
V
DS
I
D
±
I
GSM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
Unit
V
mA
mA
mW
C
C
T
amb
≤
60 C
–55 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
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