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參數(shù)資料
| 型號： | S4276-03 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Large area Si PIN photodiode for direct detection |
| 中文描述： | 大面積硅PIN光電二極管的直接探測 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 207K |
| 代理商： | S4276-03 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode
S5377/S4276 series
Cat. No. KPIN1058E01
Mar. 2001 DN
I
Dark current vs. reverse voltage
0
20
40
60
80
100
0
300
200
100
500
400
800
700
600
1000
900
120 140 160 180 200
REVERSE VOLTAGE
(V)
T
(Typ. Ta=25 C)
S5377-05
S5377-02
I
Terminal capacitance vs. reverse voltage
I
Dimensional outlines [unit: mm, tolerance unless otherwise noted: ±0.2, material of PCB: G10 (black)]
44.0 ± 0.2
4
1
3
3.0
CATHODE
RESIN FOR
1
ANODE
CATHODE
1.6
3
PROTECTION RESIN
H
o
2
H×
(4
) 2.3 ± 0.1
o
A28.0
(4
×
) R1.0
0
20
40
60
80
100
120
140
160
180
0
10
20
40
30
50
200
REVERSE VOLTAGE
(V)
D
(Typ. Ta=25
C)
S5377-05
S5377-02
I
Reference
T. MOTOBAYASHI, et al., “PARTICLE IDENTIFICATION OF HEAVY IONS WITH LARGE SILICON DETECTORS”, Nucl. Instr.
Meth. A284 (1989) 526-528
CATHODE ANODE
2.75
2
6
3.0 MAX.
11.0
ANODE
CATHODE
WIRE
H
o
4
56.0 ± 0.2
1.6
(4
×
) R1.0
H×
(4
) 2.3 ± 0.1
o
A48
KPINB0236EA
KPINB0235EA
S5377 series
S4276 series
KSPDA0023EC
KSPDA0024EB
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PDF描述 |
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| S5377 | Large area Si PIN photodiode for direct detection |
| S5377-02 | Large area Si PIN photodiode for direct detection |
| S5377-03 | Large area Si PIN photodiode for direct detection |
| S5377-04 | Large area Si PIN photodiode for direct detection |
| S5377-05 | Large area Si PIN photodiode for direct detection |
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