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參數(shù)資料
| 型號： | S413D |
| 廠商： | VISHAY TELEFUNKEN |
| 元件分類： | 整流器 |
| 英文描述： | 1.25 A, 50 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS, DOT30B, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | S413D |
S413D
Vishay Telefunken
2 (4)
Rev. 4, 11-Aug-00
www.vishay.com
Document Number 86055
Characteristics (Tj = 25_C unless otherwise specified)
I
–
Forward
Current
(
A
)
0
0.5
1.0
1.5
2.0
2.5
3.0
VF – Forward Voltage ( V )
15946
F
Tj=25°C
Tj=175°C
0.01
0.1
1
10
0.001
Figure 1. Max. Forward Current vs. Forward Voltage
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80 100 120 140 160 180
Tamb – Ambient Temperature ( °C )
15947
I
–
A
verage
Forward
Current
(
A
)
FA
V
VR =VRRM
half sinewave
RthJA=110K/W
PCB: d=25mm
RthJA=60K/W
l=10mm
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0
5
10
15
20
25
30
25
50
75
100
125
150
175
Tj – Junction Temperature ( °C )
15948
VR = VRRM
P
–
Reverse
Power
Dissipation
(
mW
)
R
150K/W
60K/W
RthJA=
Figure 3. Max. Reverse Power Dissipation vs.
Junction Temperature
1
10
100
1000
25
50
75
100
125
150
175
1
10
100
1000
25
50
75
100
125
150
175
Tj – Junction Temperature ( °C )
15949
VR = VRRM
m
I
–
Reverse
Current
(
A
)
R
Figure 4. Max. Reverse Current vs. Junction Temperature
0
5
10
15
20
25
0.1
1.0
10.0
100.0
VR – Reverse Voltage ( V )
15950
C
–
Diode
Capacitance
(
pF
)
D
f=1MHz
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
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