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參數(shù)資料
| 型號： | S4111-35Q |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | CERAMIC, DIP-40 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 133K |
| 代理商： | S4111-35Q |
Si photodiode array
S4111/S4114 series
s Dark current vs. reverse voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
190
400
600
800
1000
1200
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
(Typ. Ta=25 C)
S4114 SERIES
S4111-16Q/-35Q/-46Q
S4111-16R
s Spectral response
KMPDB0112EA
+1.4
+1.2
+1.0
+0.8
+0.6
+0.4
+0.2
-0.2
0
190
1100
WAVELENGTH (nm)
800
1000
600
400
TEMPERATURE
COEFFICIENT
(%/
C)
(Typ. )
S4111 SERIES
S4114 SERIES
KMPDB0113EA
1
10
RELATIVE
SENSITIVITY
(%)
LIGHT POSITION ON ACTIVE AREA (500
mm/div.)
(Ta=25 C,
l=655 mm, VR=0 V)
0.1
100
KMPDB0015EA
100
10
1
0.1
RELATIVE
SENSITIVITY
(%)
LIGHT POSITION ON ACTIVE AREA (500
mm/div.)
(Ta=25 C,
l=655 mm, VR=0 V)
KMPDB018EB
0.01
0.1
1
10
100
100 fA
10 fA
1 pA
10 pA
100 pA
REVERSE VOLTAGE (V)
DARK
CURRENT
S4114-35Q/-46Q
S4111-35Q/-46Q
S4111-16Q/-16R
(Typ. Ta=25 C)
KMPDB0114EA
0.1
1
10
100
10 pF
100 pF
1 nF
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
S4111-16Q/-16R
S4114-35Q/-46Q
S4111-35Q/-46Q
(Typ. Ta=25 C)
KMPDB0115EA
s Example of cross-talk
S4114 series
S4111 series
s Terminal capacitance vs. reverse voltage
s Photo sensitivity temperature characteristics
2
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PDF描述 |
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| S4315-02 | AVALANCHE PHOTO DIODE |
| S2381 | AVALANCHE PHOTO DIODE |
| S8611-02 | AVALANCHE PHOTO DIODE |
| S2384 | AVALANCHE PHOTO DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S4111-46Q | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR |
| S41-1210 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC |
| S4113 | 制造商:MERKLE-KORFF INDUSTRIES 功能描述:OLD COLMAN P/N: 2445999 |
| S4114 | 制造商:MERKLE-KORFF INDUSTRIES 功能描述:OLD COLMAN P/N: 2446020 |
| S4114-35Q | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR |
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