參數(shù)資料
型號: S3K/9T
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB
封裝: PLASTIC, SMC, 2 PIN
文件頁數(shù): 3/4頁
文件大小: 335K
代理商: S3K/9T
S3A thru S3M
Document Number 88713
06-Sep-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0.6
0.7
10
100
0.8
0.9
1.1
1.2
1.3
0.01
0.1
1
1.0
InstantaneousForward Voltage (V)
Instantaneo
u
sF
o
rw
ard
C
u
rrent
(A)
TJ = 25 °C
Pulse Width = 300 s
1% Duty Cycle
0
20
40
60
80
100
0.1
1
10
100
TJ = 125 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
10
100
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
0.01
0.1
1
10
100
0.1
1
10
100
Mounted on 0.20 x 0.27" (5 x 7mm)
Copper Pad Areas
t, Pulse Duration (sec.)
T
ransient
T
her
mal
Impedance
C
/W
)
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC)
0.185 MAX.
(4.69 MAX.)
0.320 REF
0.126 MIN.
(3.20 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
0 (0)
相關(guān)PDF資料
PDF描述
S3J-HE3 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB
S3MB-13 3 A, 1000 V, SILICON, RECTIFIER DIODE
S3JB-13 3 A, 600 V, SILICON, RECTIFIER DIODE
S3M 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA
S3D-T3 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
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