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參數(shù)資料
| 型號(hào)： | S350P |
| 廠商： | VISHAY TELEFUNKEN |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | MINIATURE, PLASTIC, T-3/4 PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | S350P |
S350P
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.com
Document Number 81543
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat
window.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with
lp > 850nm.
Features
D High radiant sensitivity
D Miniature T– flat plastic package with IR filter
D Very wide angle of half sensitivity = ± 40°
D Suitable for near infrared radiation
D Suitable for 0.1” (2.54 mm) center–to–center
spacing
94 8640
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
32
V
Emitter Collector Voltage
VECO
5
V
Collector Current
IC
50
mA
Peak Collector Current
tp/T = 0.5, tp x 10 ms
ICM
100
mA
Total Power Dissipation
Tamb x 55 °C
Ptot
100
mW
Junction Temperature
Tj
100
°C
Storage Temperature Range
Tstg
–55...+100
°C
Soldering Temperature
t
x 3 s
Tsd
260
°C
Thermal Resistance Junction/Ambient
RthJA
450
K/W
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