參數(shù)資料
型號(hào)： S29WS128N0LBFI113
廠商： Spansion Inc.
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 256/128/64兆位的CMOS 1.8伏只有同時(shí)讀/寫突發(fā)模式閃存
文件頁(yè)數(shù)： 89/99頁(yè)
文件大?。?/td> 1091K
代理商： S29WS128N0LBFI113
January 25, 2005 S29WS-N_00_G0
S29WS-N MirrorBit Flash Family
7
Ad vance
Information
2
Input/Output Descriptions & Logic Symbol
Table identifies the input and output package connections provided on the device.
Table 2.1. Input/Output Descriptions
Symbol
Type
Description
A23–A0
Input
Address lines for WS256N (A22-A0 for WS128 and A21-A0 for WS064N).
DQ15–DQ0
I/O
Data input/output.
CE#
Input
Chip Enable. Asynchronous relative to CLK.
OE#
Input
Output Enable. Asynchronous relative to CLK.
WE#
Input
Write Enable.
VCC
Supply
Device Power Supply.
VIO
Input
VersatileIO Input. Should be tied to VCC.
VSS
I/O
Ground.
NC
No Connect
Not connected internally.
RDY
Output
Ready. Indicates when valid burst data is ready to be read.
CLK
Input
Clock Input. In burst mode, after the initial word is output, subsequent active edges of CLK
increment the internal address counter. Should be at VIL or VIH while in asynchronous
mode.
AVD#
Input
Address Valid. Indicates to device that the valid address is present on the address inputs.
When low during asynchronous mode, indicates valid address; when low during burst
mode, causes starting address to be latched at the next active clock edge.
When high, device ignores address inputs.
RESET#
Input
Hardware Reset. Low = device resets and returns to reading array data.
WP#
Input
Write Protect. At VIL, disables program and erase functions in the four outermost sectors.
Should be at VIH for all other conditions.
ACC
Input
Acceleration Input. At VHH, accelerates programming; automatically places device in
unlock bypass mode. At VIL, disables all program and erase functions. Should be at VIH for
all other conditions.
RFU
Reserved
Reserved for future use (see MCP look-ahead pinout for use with MCP).
相關(guān)PDF資料
PDF描述
S29WS128N0LBFW011 Test Clip; Current Rating:100A; Body Material:Steel; Features:Unmarked; Jaw Opening Max:1.625"; Overall Length:6" RoHS Compliant: NA
S29WS128N0LBFI011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI012 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI013 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI110 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29WS128N0LBFW010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW011 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW110 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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