參數(shù)資料
型號: S29WS064J
廠商: Spansion Inc.
英文描述: 128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 128/64兆位(8 / 4米× 16位)的CMOS 1.8伏,只有同時讀/寫,突發(fā)模式閃存
文件頁數(shù): 96/98頁
文件大小: 1986K
代理商: S29WS064J
96
S29WS128J/064J
S29WS-J_00_A4 June 24, 2005
D a t a S h e e t
VBR080 - 80-ball Fine-Pitch Ball Grid Array (FBGA) 7 x 9 mm (64Mb)
8256))8++21
3366 \ 16-038.25d1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
VBR 080
JEDEC
N/A
9.00 mm x 7.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.00
OVERALL THICKNESS
A1
0.17
- --
---
BALL HEIGHT
A2
0.62
---
0.73
BODY THICKNESS
D
9.00 BSC.
BODY SIZE
E
7.00 BSC.
BODY SIZE
D1
7.20 BSC.
BALL FOOTPRINT
E1
5.60 BSC.
BALL FOOTPRINT
MD
10
ROW MATRIX SIZE D DIRECTION
ME
8
ROW MATRIX SIZE E DIRECTION
N
φ
b
e
80
TOTAL BALL COUNT
0.35
---
0.45
BALL DIAMETER
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
NONE
DEPOPULATED SOLDER BALLS
BOTTOM VIEW
A1 CORNER
J
K
e
7
B
A
C
E
D
F
H
G
8
7
6
5
4
3
2
1
e
D1
E1
SE
7
B
C A
C
M
φ
0.15
φ
0.08 M
6
NX
φ
b
SD
SIDE VIEW
A2
A
A1
0.20 C
C
0.08
C
SEATING PLANE
TOP VIEW
10
C
0.15
(2X)
(2X)
C
0.15
E
D
A
B
A1 CORNER
INDEX MARK
相關(guān)PDF資料
PDF描述
S29WS128J 128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S2E00 1.5W, Ultra-High Isolation DIP, Single & Dual Output DC/DC Converters
S2E01 1.5W, Ultra-High Isolation DIP, Single & Dual Output DC/DC Converters
S2E02 1.5W, Ultra-High Isolation DIP, Single & Dual Output DC/DC Converters
S2E03 1.5W, Ultra-High Isolation DIP, Single & Dual Output DC/DC Converters
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29WS064J0PBAI01 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 84FBGA - Trays
S29WS064J0PBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS064J0PBAW01 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS064J0PBFW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS064J0PBFW01 制造商:SPANSION 制造商全稱:SPANSION 功能描述:128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory