參數(shù)資料
型號: S29PL129N
廠商: Spansion Inc.
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 256/128/128字節(jié)(16/8/8 M中的x 16位),3.0伏的CMOS只同步讀/寫,頁模式閃存
文件頁數(shù): 64/74頁
文件大小: 1968K
代理商: S29PL129N
64
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 11.13
Data# Polling Timings (During Embedded Algorithms)
Note
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
Figure 11.14
Toggle Bit Timings (During Embedded Algorithms)
Note
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array
data read cycle
Figure 11.15
DQ2 vs. DQ6
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6.
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ6–DQ0
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
OE#
CE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
OE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ6/DQ2
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
相關(guān)PDF資料
PDF描述
S29PL129N65GAW000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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