參數(shù)資料
型號: S29GL256M10TFIR12
廠商: SPANSION LLC
元件分類: DRAM
英文描述: MOSFET, Switching; VDSS (V): 60; ID (A): 6; Pch : 2/3; RDS (ON) typ. (ohm) @10V: 0.028; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1000; toff (µs) typ: 0.06; Package: SOP-8
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: LEAD FREE, MO-142-EC, TSOP-56
文件頁數(shù): 7/160頁
文件大?。?/td> 2142K
代理商: S29GL256M10TFIR12
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
7
P r e l i m i n a r y
Block Diagram
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
V
CC
Detector
State
Control
Command
Register
V
CC
V
SS
WE#
WP#/ACC
BYTE#
CE#
OE#
STB
STB
DQ15
DQ0 (A-1)
Sector Switches
RY/BY#
RESET#
Data
Latch
Y-Gating
Cell Matrix
A
A
Max
**–A0
** A
Max
GL256M = A23, A
Max
GL128M = A22, A
Max
GL064M = A21 (A
Max
GL064M-00 = A22),
A
Max
GL032M = A20 (A
Max
GL032M-00 = A21)
相關PDF資料
PDF描述
S29GL256M10TFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL256M10TFIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29NS128P MirrorBit Flash Family
相關代理商/技術參數(shù)
參數(shù)描述
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FFIR10 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:Flash Memory IC