參數(shù)資料
型號: S29GL256M10FFIR20
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 18 X 12 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù): 124/160頁
文件大?。?/td> 2142K
代理商: S29GL256M10FFIR20
124
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
AC Characteristics
Read-Only Operations-S29GL256M only
Parameter
JEDEC
Std.
Notes:
1. Not 100% tested.
2. See
Figure 11
and Table
34
for test specifications.
Read-Only Operations-S29GL128M only
Parameter
JEDEC
Std.
Notes:
1. Not 100% tested.
2. See
Figure 11
and Table
34
for test specifications.
Description
Test Setup
Speed Options
10
Unit
11
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
100
100
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
100
100
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
100
100
ns
t
PACC
Page Access Time
Max
30
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Description
Test Setup
Speed Options
90
Unit
10
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
90
100
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
90
100
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
90
100
ns
t
PACC
Page Access Time
Max
25
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
25
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
16
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
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