參數(shù)資料
型號: S29GL256M10FFIR12
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 18 X 12 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù): 123/160頁
文件大?。?/td> 2142K
代理商: S29GL256M10FFIR12
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
123
P r e l i m i n a r y
Test Conditions
Key to Switching Waveforms
Figure 12. Input Waveforms and
Measurement Levels
Note:
Diodes are IN3064 or equivalent
Figure 11. Test Setup
Table 34. Test Specifications
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Test Condition
All Speeds
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0 or V
CC
V
Input timing measurement
reference levels (See Note)
0.5 V
CC
V
Output timing measurement
reference levels
0.5 V
CC
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
VCC
0.0 V
Output
Measurement Level
Input
0.5 VCC
0.5 VCC
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