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參數(shù)資料
| 型號(hào)： | S29GL256M10FAIR12 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| 中文描述： | 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 18 X 12 MM, FORTIFIED, BGA-64 |
| 文件頁(yè)數(shù)： | 95/160頁(yè) |
| 文件大小： | 2142K |
| 代理商： | S29GL256M10FAIR12 |
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April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
95
P r e l i m i n a r y
Figure 2. In-System Sector Group
Protect/Unprotect Algorithms
Sector Group Protect:
Write 60h to sector
group address with
A6–A0 = 0xx0010
Set up sector
group address
Wait 150 μs
Verify Sector Group
Protect: Write 40h
to sector group
address with
A6–A0 = 0xx0010
Read from
sector group address
with A6–A0
= 0xx0010
START
PLSCNT = 1
RESET# = V
ID
Wait 1
μ
s
First Write
Cycle = 60h
Data = 01h
Remove V
from RESET#
Write reset
command
Sector Group
Protect complete
Yes
Yes
No
PLSCNT
= 25
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Group Unprotect
Mode
No
Sector Group
Unprotect:
Write 60h to sector
group address with
A6–A0 = 1xx0010
Set up first sector
group address
Wait 15 ms
Verify Sector Group
Unprotect: Write
40h to sector group
address with
A6–A0 = 1xx0010
Read from
sector group
address with
A6–A0 = 1xx0010
START
PLSCNT = 1
RESET# = V
ID
Wait 1
μ
s
Data = 00h
Last sector
group
verified
Remove V
from RESET#
Write reset
command
Sector Group
Unprotect complete
Yes
No
PLSCNT
= 1000
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Group Unprotect
Mode
No
All sector
groups
protected
Yes
Protect all sector
groups:
The indicated
portion of the sector
group protect algorithm
must be performed for all
unprotected sector
groups prior to issuing
the first sector group
unprotect address
Set up
next sector group
address
No
Yes
No
Yes
No
No
Yes
No
Sector Group
Protect
Algorithm
Sector Group
Unprotect
Algorithm
First Write
Cycle = 60h
Protect
another
sector group
Reset
PLSCNT = 1
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| S29GL256M10FAIR13 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL256M10FAIR20 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL256M10FAIR22 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL256M10FAIR23 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL256M10FFIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL256M10TAIR10 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 100ns 56-Pin TSOP Tray |
| S29GL256M11FAIR10 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray |
| S29GL256M11FAIR12 | 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays |
| S29GL256M11FAIR2 | 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA |
| S29GL256M11FAIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray |
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