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參數(shù)資料
| 型號： | S29GL128P90FFIR12 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 90 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 37/77頁 |
| 文件大小： | 2121K |
| 代理商： | S29GL128P90FFIR12 |
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November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
37
D a t a
S h e e t
( P r e l i m i n a r y )
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid
data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7-D00 appears on successive read
cycles.
See the following for more information:
Table 7.17
Figure 7.4
,
shows the Data# Polling algorithm; and
Figure 11.7
, shows the Data# Polling timing diagram.
Figure 7.4
Write Operation Status Flowchart
START
Read 1
DQ7=valid
data
YES
NO
Read 1
DQ5=1
YES
NO
Write Buffer
Programming
YES
NO
Device BUSY,
Re-Poll
Read1
DQ1=1
YES
NO
Read 2
Read 3
Read 2
Read 3
Read 2
Read 3
Read3 DQ1=1
AND DQ7
Valid Data
YES
NO
(Note 4)
Write Buffer
Operation Failed
DQ6
toggling
YES
NO
TIMEOUT
(Note 1)
(Note 3)
Programming
Operation
DQ6
toggling
YES
NO
YES
NO
DQ2
toggling
YES
NO
Erase
Operation
Complete
Device in
Erase/Suspend
Mode
Program
Operation
Failed
DEVICE
ERROR
Program
Operation
Complete
Read3= valid
data
YES
NO
Notes:
1) DQ6 is toggling if Read2 DQ6 does not equal Read3 DQ6.
2) DQ2 is toggling if Read2 DQ2 does not equal Read3 DQ2.
3) May be due to an attempt to program a 0 to 1. Use the RESET
command to exit operation.
4) Write buffer error if DQ1 of last read =1.
5) Invalid state, use RESET command to exit operation.
6) Valid data is the data that is intended to be programmed or all 1's for
an erase operation.
7) Data polling algorithm valid for all operations except advanced sector
protection.
Device BUSY,
Re-Poll
Device BUSY,
Re-Poll
Device BUSY,
Re-Poll
(Note 1)
(Note 2)
(Note 6)
(Note 5)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128P90FFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P90FFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P90TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P90TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P90TAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P90FFIR13 | 功能描述:閃存 128Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P90FFIR20 | 功能描述:閃存 128MB 3.0-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P90FFIR22 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 64BGA - Tape and Reel |
| S29GL128P90FFSS00 | 制造商:Spansion 功能描述:128M (16MX8/8MX16) 3V REG, MBIT, FBGA64, COMM. HAZMAT - Bulk |
| S29GL128P90TAIR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 56TSOP - Trays |
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