參數(shù)資料
型號: S29GL128P11FFIR12
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述: 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
文件頁數(shù): 65/77頁
文件大?。?/td> 2121K
代理商: S29GL128P11FFIR12
November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
65
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 11.15
Alternate CE# Controlled Write (Erase/Program) Operation Timings
Notes
1.
Figure 11.15
indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Waveforms are for the word mode.
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
相關(guān)PDF資料
PDF描述
S29GL128P11FFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11FFIV12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11TAI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11TAI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P11TAIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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