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參數(shù)資料
| 型號(hào)： | S29GL128P10FFIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁(yè)數(shù)： | 10/77頁(yè) |
| 文件大小： | 2121K |
| 代理商： | S29GL128P10FFIV10 |
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10
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Recommended Combinations
Recommended Combinations list configurations planned to be supported in volume for this device. Consult
your local sales office to confirm availability of specific recommended combinations and to check on newly
released combinations.
Notes
1. Contact a local sales representative for availability.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading “S29” and packing type designator from ordering part number.
4. Type 0 is standard. Specify other options as required.
S29GL-P Valid Combinations
Speed
Package & Temperature
Model Number
Packing Type
S29GL01GP
11
TAI
(1)(2)
TFI
(2)
R1, R2
0, 3
(4)
12
01, 02
13
V1, V2
11
FAI
(1)(3)
FFI
(3)
R1, R2
0, 2, 3
(4)
12
01, 02
13
V1, V2
S29GL512P
10
TAI
(1)(2)
TFI
(2)
R1, R2
0, 3
(4)
10
(1)
, 11
01, 02
11
(1)
, 12
V1, V2
10
FAI
(1)(3)
FFI
(3)
R1, R2
0, 2, 3
(4)
10
(1)
, 11
01, 02
11
(1)
, 12
V1, V2
S29GL256P,
S29GL128P
90
TAI
(1)(2)
TFI
(2)
R1, R2
0, 3
(4)
10, 11
01, 02
11
V1, V2
90
FAI
(1)(3)
FFI
(3)
R1, R2
0, 2, 3
(4)
10, 11
01, 02
11
V1, V2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128P10FFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10TAI010 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays |
| S29GL128P10TAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays |
| S29GL128P10TFI010 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P10TFI010 | 制造商:Spansion 功能描述:IC SM FLASH 3V 128MB 100NS |
| S29GL128P10TFI010-AU | 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO |
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