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| 型號(hào)： | S29GL128P10FFIR10 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁(yè)數(shù)： | 60/77頁(yè) |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P10FFIR10 |
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60
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
11.7.3
S29GL-P Erase and Program Operations
Notes
1. Not 100% tested.
2. See
Section 11.6
for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
V
IO
= V
CC
= 2.7 V. AC specifications for 110 ns speed options are tested with V
IO
= 1.8 V and V
CC
= 3.0 V.
Table 11.6
S29GL-P Erase and Program Operations
Parameter
JEDEC
t
AVAV
t
AVWL
Description
Write Cycle Time
(Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
Output Enable High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes
2
,
3
)
Effective Write Buffer Program Operation (Notes
2
,
4
)
Accelerated Effective Write Buffer Program Operation
(Notes
2
,
4
)
Program Operation
(Note 2)
Accelerated Programming Operation
(Note 2)
Sector Erase Operation
(Note 2)
V
HH
Rise and Fall Time
(Note 1)
V
CC
Setup Time
(Note 1)
Erase/Program Valid to RY/BY# Delay
Sector Erase Timeout
Speed Options
100
110
100
110
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
Std.
t
WC
t
AS
t
ASO
t
AH
t
AHT
t
DS
t
DH
t
CEPH
t
OEPH
t
GHWL
t
CS
t
CH
t
WP
t
WPH
90
90
120
120
130
130
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
0
15
45
0
30
0
20
20
0
0
0
35
30
480
15
t
WLAX
t
DVWH
t
WHDX
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHDL
t
WHWH1
t
WHWH1
Per Word
Per Word
Typ
13.5
μs
Word
Word
Typ
Typ
Typ
Min
Min
Max
Max
60
54
0.5
250
35
90
50
μs
μs
sec
ns
μs
ns
μs
t
WHWH2
t
WHWH2
t
VHH
t
VCS
t
BUSY
t
SEA
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| S29GL128P10FFIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10FFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10FFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10FFIS10 | 功能描述:閃存 128MB 3.0V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P10FFIS20 | 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays |
| S29GL128P10FFIS22 | 制造商:Spansion 功能描述:IC FLASH MEMORY - Tape and Reel |
| S29GL128P10TAI010 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays |
| S29GL128P10TAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Trays |
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