參數(shù)資料
型號: S29GL064N90FFI062
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù): 64/79頁
文件大?。?/td> 2191K
代理商: S29GL064N90FFI062
64
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
15. AC Characteristics
Notes
1. Not 100% tested.
2. See
Figure 14.1 on page 63
and
Table 14.1 on page 63
for test specifications.
Figure 15.1
V
CC
Power-up Diagram
Table 15.1
Read-Only Operations
Parameter
Description
Test Setup
Speed Options
Unit
JEDEC
Std.
90
110
t
AVAV
t
AVQV
t
ELQV
t
RC
t
ACC
t
CE
Read Cycle Time
(Note 1)
Min
90
110
ns
Address to Output Delay
CE#, OE# = V
IL
OE# = V
IL
V
IO
= V
CC
= 3 V
V
IO
= 1.8 V, V
CC
= 3 V
V
IO
= V
CC
= 3 V
V
IO
= 1.8 V, V
CC
= 3 V
Max
90
110
ns
Chip Enable to Output Delay
Max
90
110
ns
t
PACC
Page Access Time
Max
25
25
ns
30
t
GLQV
t
OE
Output Enable to Output Delay
Max
25
25
ns
30
t
EHQZ
t
GHQZ
t
DF
t
DF
Chip Enable to Output High Z
(Note 1)
Max
20
ns
Output Enable to Output High Z
(Note 1)
Max
20
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold
Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
V
CC
RE
S
ET#
t
VC
S
CE#
V
CC
min
V
IH
t
RH
相關(guān)PDF資料
PDF描述
S29GL064N90FFI070 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFI072 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFIV10 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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