參數(shù)資料
型號： S29GL064N90BFI070
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 64兆，32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁數(shù)： 53/79頁
文件大?。?/td> 2191K
代理商： S29GL064N90BFI070
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
53
D a t a
S h e e t
Table 10.3
Command Definitions (x8 Mode, BYTE# = V
IL
)
Command Sequence
(Note 1)
C
Bus Cycles (Notes
2
–
5
)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
(Note 6)
1
RA
RD
Reset
(Note 7)
1
XXX
F0
A
(
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID
(Note 9)
6
AAA
AA
555
55
AAA
90
X02
7E
X1C
(Note 17)
X1E
(Note 17)
Device ID
4
AAA
AA
555
55
AAA
90
X02
(Note 10)
Secured Silicon Sector Factory Protect
4
AAA
AA
555
55
AAA
90
X06
Sector Protect Verify
(Note 11)
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
Enter Secured Silicon Sector Region
3
AAA
AA
555
55
AAA
88
Exit Secured Silicon Sector Region
4
AAA
AA
555
55
AAA
90
XXX
00
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer
(Note 12)
3
AAA
AA
555
55
SA
25
SA
BC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset
(Note 13)
3
AAA
AA
555
55
AAA
F0
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Unlock Bypass
AAA
AA
555
55
AAA
20
Unlock Bypass Program
XXX
A0
PA
PD
Unlock Bypass RESET
XXX
90
XXX
00
Program/Erase Suspend
(Note 14)
1
XXX
B0
Program/Erase Resume
(Note 15)
1
XXX
30
CFI Query
(Note 16)
1
AA
98
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or
CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page
as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
Notes
1. See
Table 8.1 on page 17
for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or
AAA as shown in table, address bits above A11 are don’t care.
5. Unless otherwise noted, address bits A21–A11 are don’t cares.
6. No unlock or command cycles required when device is in read mode.
7. Reset command is required to return to read mode (or to erase-suspend-
read mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
8. Fourth cycle of autoselect command sequence is a read cycle. Data bits
DQ15–DQ8 are don’t care. See
Autoselect Command Sequence
on page 42
for more information.
9. For S29GL064N and S29GL032A Device ID must be read in three cycles.
10.Refer to
Table 8.9 on page 29
, for data indicating Secured Silicon Sector
factory protect status.
11.Data is 00h for an unprotected sector and 01h for a protected sector.
12.Total number of cycles in command sequence is determined by number of
bytes written to write buffer. Maximum number of cycles in command
sequence is 37, including
Program Buffer to Flash
command.
13.Command sequence resets device for next command after aborted write-
to-buffer operation.
14.System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid
only during a sector erase operation.
15.Erase Resume command is valid only during Erase Suspend mode.
16.Command is valid when device is ready to read array data or when device
is in autoselect mode.
17.Refer to
Table 8.9 on page 29
, for individual Device IDs per device density
and model number.
相關(guān)PDF資料
PDF描述
S29GL064N90BFI072 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFIV10 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064N90DAI010 制造商:Spansion 功能描述:64M FLASH MEMORY - Trays
S29GL064N90DFI010 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90DFI020 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90DFI030 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90DFI040 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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