參數(shù)資料
型號(hào)： S29GL064N90BAI010
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 64兆，32兆位3.0伏只頁(yè)面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù)： 55/79頁(yè)
文件大?。?/td> 2191K
代理商： S29GL064N90BAI010
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
55
D a t a
S h e e t
10.10 Write Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5,
DQ6, and DQ7.
Table 10.5 on page 60
and the following subsections describe the function of these bits. DQ7
and DQ6 each offer a method for determining whether a program or erase operation is complete or in
progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an
Embedded Program or Erase operation is in progress or is completed.
10.11 DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm
is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 1 μs, then the device returns to the read
mode.
During the Embedded Erase algorithm, Data# Polling produces a
0
on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a
1
on DQ7.
The system must provide an address within any of the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 μs, then the device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing
status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read
the status or valid data. Even if the device completed the program or erase operation and DQ7 has valid data,
the data outputs on DQ0–DQ6 may be still invalid. Valid data on DQ0–DQ7 appears on successive read
cycles.
Table 10.5 on page 60
shows the outputs for Data# Polling on DQ7.
Figure 10.5 on page 56
shows the Data#
Polling algorithm.
Figure 15.8 on page 69
shows the Data# Polling timing diagram.
相關(guān)PDF資料
PDF描述
S29GL064N90BAI012 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BAI020 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI030 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI032 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI040 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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S29GL064N90BFI030 功能描述:閃存 64MB 2.7-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90BFI033 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 64BGA - Tape and Reel
S29GL064N90BFI040 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90BFI042 制造商:Spansion 功能描述:
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