參數(shù)資料
型號(hào)： S29GL064N11TFIV10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 4M X 16 FLASH 3V PROM, 110 ns, PDSO56
封裝： LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù)： 41/79頁(yè)
文件大小： 2191K
代理商： S29GL064N11TFIV10
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
41
D a t a
S h e e t
10. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations.
Table 10.1 on page 51
and
Table 10.3 on page 53
define the valid register command sequences.
Writing incorrect address and data values or writing them in the improper sequence may place the device in
an unknown state.
A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing
diagrams.
10.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after
which the system can read data from any non-erase-suspended sector. After completing a programming
operation in the Erase Suspend mode, the system may once again read array data with the same exception.
See
Erase Suspend/Erase Resume Commands
on page 50
for more information.
The system
must
issue the reset command to return the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See
the next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations section for more information.
The Read-Only Operations–
AC Characteristics
on page 64
provide the read parameters, and
Figure 15.2
on page 65
shows the timing diagram.
10.2
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t
cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the device to the read mode. If the program command sequence is written
while the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-
suspend-read mode. Once programming begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to the read mode. If the device
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the Write-to-
Buffer-Abort Reset command sequence to reset the device for the next operation.
相關(guān)PDF資料
PDF描述
S29GL064N11TFIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TFIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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