參數(shù)資料
型號(hào): S29GL064N11TAI012
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 64兆,32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁數(shù): 72/79頁
文件大?。?/td> 2191K
代理商: S29GL064N11TAI012
72
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
Figure 15.11
Alternate CE# Controlled Write (Erase/Program) Operation Timings
Notes
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Illustration shows device in word mode.
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
PBD for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
29 for program buffer to flash
30 for sector erase
10 for chip erase
PBA for program
2AA for erase
SA for program buffer to flash
SA for sector erase
555 for chip erase
t
BUSY
相關(guān)PDF資料
PDF描述
S29GL064N11TAI020 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TAI022 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TAI030 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TAI032 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TAI040 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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