參數(shù)資料
型號(hào)： S29GL064N11FFIV20
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 4M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù)： 73/79頁
文件大?。?/td> 2191K
代理商： S29GL064N11FFIV20
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
73
D a t a
S h e e t
16. Erase And Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0V, 10,000 cycles; checkerboard data pattern.
2. Under worst case conditions of 90
°
C; Worst case V
CC
, 100,000 cycles.
3. Programming time (typ) is 15
μ
s (per word), 7.5
μ
s (per byte).
4. Accelerated programming time (typ) is 12.5
μ
s (per word), 6.3
μ
s (per byte).
5. Write buffer Programming time is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
Table 10.1 on page 51
and
Table 10.3
on page 53
for further information on command definitions.
Notes
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ
(Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h
programming prior
to erasure
(Note 6)
Chip Erase Time
S29GL032N
32
64
S29GL064N
64
128
Total Write Buffer Program Time (Notes
3
,
5
)
240
μs
Excludes system
level overhead
(Note 7)
Total Accelerated Effective Write Buffer Program Time (Notes
4
,
5
)
200
Chip Program Time
S29GL032N
31.5
sec
S29GL064N
63
Table 16.1
TSOP Pin and BGA Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
10
pF
BGA
TBD
TBD
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
6
12
pF
BGA
TBD
TBD
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
6
10
pF
BGA
TBD
TBD
pF
C
IN3
#RESET, #WP/ACC Pin Capacitance
V
IN
= 0
TSOP
27
30
pF
BGA
TBD
TBD
pF
相關(guān)PDF資料
PDF描述
S29GL064N11BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BFIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FAI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FAI012 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064N11TAIV20 制造商:Spansion 功能描述:IC 64M PAGE-MODE FLASH MEMORY - Trays 制造商:Spansion 功能描述:SPZS29GL064N11TAIV20 PG-MODE FLASH MEM
S29GL064N11TFIV10 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N11TFIV13 制造商:Spansion 功能描述:FLASH MEMORY - Trays
S29GL064N11TFIV20 功能描述:閃存 64MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N11TFIV73 制造商:Spansion 功能描述:64M (4MX16) 3V REG, MIRRORBIT, FBGA63, IND - Tape and Reel
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