參數(shù)資料
型號： S29GL064N11FAIV20
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 4M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁數(shù)： 47/79頁
文件大?。?/td> 2191K
代理商： S29GL064N11FAIV20
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
47
D a t a
S h e e t
Figure 10.3
Program Suspend/Program Resume
10.6
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does
not
require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations.
Table 10.1 on page 51
and
Table 10.3 on page 53
show the
address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2.
Refer to
Write Operation Status
on page 55
for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a
hardware reset
immediately terminates the erase operation. If this occurs, the chip erase command sequence should be
reinitiated once the device returns to reading array data, to ensure data integrity.
Figure 10.4 on page 49
illustrates the algorithm for the erase operation. Refer to
Table 15.3 on page 67
for
parameters, and
Figure 15.7 on page 69
for timing diagrams.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write Program Suspend
Command Sequence
Command is also valid for
Erase-suspended-program
operations
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Write Program Resume
Command Sequence
Read data as
required
Done
reading
No
Yes
Write address/data
XXXh/30h
Device reverts to
operation prior to
Program Suspend
Write address/data
XXXh/B0h
Wait 20
μ
s
相關PDF資料
PDF描述
S29GL064N11FAIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TAI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TAI012 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TAI020 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TAI022 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關代理商/技術參數(shù)
參數(shù)描述
S29GL064N11FFIV10 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N11FFIV20 制造商:Spansion 功能描述:
S29GL064N11TAIV20 制造商:Spansion 功能描述:IC 64M PAGE-MODE FLASH MEMORY - Trays 制造商:Spansion 功能描述:SPZS29GL064N11TAIV20 PG-MODE FLASH MEM
S29GL064N11TFIV10 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N11TFIV13 制造商:Spansion 功能描述:FLASH MEMORY - Trays
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