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    參數(shù)資料
    型號: S29GL064M90FFIR20
    廠商: SPANSION LLC
    元件分類: DRAM
    英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
    封裝: 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
    文件頁數(shù): 108/160頁
    文件大小: 2142K
    代理商: S29GL064M90FFIR20
    108
    S29GLxxxM MirrorBit
    TM
    Flash Family
    S29GLxxxM_00A5 April 30, 2004
    P r e l i m i n a r y
    Figure 4. Program Operation
    Program Suspend/Program Resume Command Sequence
    The Program Suspend command allows the system to interrupt a programming
    operation or a Write to Buffer programming operation so that data can be read
    from any non-suspended sector. When the Program Suspend command is written
    during a programming process, the device halts the program operation within 15
    μ
    s maximum (5
    μ
    s typical) and updates the status bits. Addresses are not re-
    quired when writing the Program Suspend command.
    After the programming operation has been suspended, the system can read array
    data from any non-suspended sector. The Program Suspend command may also
    be issued during a programming operation while an erase is suspended. In this
    case, data may be read from any addresses not in Erase Suspend or Program
    Suspend. If a read is needed from the SecSi Sector area (One-time Program
    area), then user must use the proper command sequences to enter and exit this
    region. Note that the SecSi Sector, autoselect, and CFI functions are unavailable
    when a program operation is in progress.
    The system may also write the autoselect command sequence when the device
    is in the Program Suspend mode. The system can read as many autoselect codes
    as required. When the device exits the autoselect mode, the device reverts to the
    Program Suspend mode, and is ready for another valid operation. See Autoselect
    Command Sequence for more information.
    START
    Write Program
    Command Sequence
    Data Poll
    from System
    Verify Data
    No
    Yes
    Last Address
    No
    Yes
    Programming
    Completed
    Increment Address
    Embedded
    Program
    algorithm
    in progress
    Note:
    See Table
    31
    and Table
    32
    for program com-
    mand sequence.
    相關(guān)PDF資料
    PDF描述
    S29GL064M90FFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    S29GL064M90FFIR23 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (&#181;s) typ: 0.055; Package: LDPAK (L)
    S29GL064M90FFIR30 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (&#181;s) typ: 0.055; Package: LDPAK (S)- (2)
    S29GL064M90FFIR32 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (&#181;s) typ: 0.055; Package: LDPAK (S)- (1)
    S29GL064M90FFIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
    S29GL064M90TAIR2 制造商:Spansion 功能描述:
    S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
    S29GL064M90TAIR3 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP
    S29GL064M90TAIR30 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray