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參數(shù)資料
| 型號(hào)： | S29GL032M10TCCR63 |
| 廠商： | Spansion Inc. |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | MirrorBit閃存系列 |
| 文件頁(yè)數(shù)： | 9/159頁(yè) |
| 文件大?。?/td> | 5216K |
| 代理商： | S29GL032M10TCCR63 |
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106
S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
Data s he et
The Write Buffer Programming Sequence can be aborted in the following ways:
Load a value that is greater than the page buffer size during the Number of Locations to Program
step.
Write to an address in a sector different than the one specified during the Write-Buffer-Load com-
mand.
Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting
Address during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 = toggle,
and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device for the next
operation.
Note that the SecSi Sector, autoselect, and CFI functions are unavailable when a program operation is in
progress.This flash device is capable of handling multiple write buffer programming operations on the same write
buffer address range without intervening erases. For applications requiring incremental bit programming, a mod-
ified programming method is required; please contact your local Spansion representative. Any bit in a write
buffer address range cannot be programmed from “0” back to a “1.” Attempting to do so may cause the
device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a
succeeding read shows that the data is still “0.” Only erase operations can convert a “0” to a “1.”
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC pin depending on the particular
product. When the system asserts VHH on the WP#/ACC or ACC pin. The device uses the higher voltage on the
WP#/ACC or ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for operations
other than accelerated programming, or device damage may result. WP# has an internal pullup; when uncon-
nected, WP# is at VIH.
Figure 3, on page 107 illustrates the algorithm for the program operation. Refer to the “Erase and Program Op-
erations-S29GL032M only” on page 131 and “AC Characteristics” on page 124 section for parameters, and
Figure 14, on page 126 for timing diagrams.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10TFCR00 | MirrorBit Flash Family |
| S29GL032M10TFCR02 | MirrorBit Flash Family |
| S29GL032M10TFCR03 | MirrorBit Flash Family |
| S29GL032M10TFCR10 | CAP 15PF 100V 5% NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR |
| S29GL032M10TFCR12 | CAP 0.39UF 50V 10% BX SMD-1825 TR-7-PL SN100% P-MIL-PRF-55681 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032M10TCIR00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TCIR02 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL032M10TCIR03 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TCIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10TCIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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