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參數(shù)資料
| 型號(hào)： | S29GL032M10TAIR23 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 680uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-40; Termination: Solder Coated (SnPb, Pb 5% min); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 71/116頁(yè) |
| 文件大?。?/td> | 6024K |
| 代理商： | S29GL032M10TAIR23 |
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56
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory
In devices with an ESN, the Secured Silicon Sector is protected when the device is shipped from
the factory. The Secured Silicon Sector cannot be modified in any way. An ESN Factory Locked
device has an 16-byte random ESN at addresses 000000h–000007h. Please contact your sales
representative for details on ordering ESN Factory Locked devices.
Customers may opt to have their code programmed by the factory through the Spansion pro-
gramming service (Customer Factory Locked). The devices are then shipped from the factory with
the Secured Silicon Sector permanently locked. Contact your sales representative for details on
using the Spansion programming service.
Write Protect (WP#)
The Write Protect function provides a hardware method of protecting the first or last sector group
without using VID. Write Protect is one of two functions provided by the WP#/ACC input.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions
in the first or last sector group independently of whether those sector groups were protected or
unprotected. Note that if WP#/ACC is at VIL when the device is in the standby mode, the maxi-
mum input load current is increased (Table 29).
Note: If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the first or last sector was previously
set to be protected or unprotected using the method described in “Sector Group Protection and Unprotection”. Note that
WP# has an internal pullup; when unconnected, WP# is at VIH.
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
dition, the following hardware data protection measures prevent accidental erasure or
programming, which might otherwise be caused by spurious system level signals during VCC
power-up and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during
VCC power-up and power-down. The command register and all internal program/erase circuits are
disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is
greater than VLKO. The system must provide the proper signals to the control pins to prevent un-
intentional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate
a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on
the rising edge of WE#. The internal state machine is automatically reset to the read mode on
power-up.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10TAIR30 | Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 680uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-40; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR |
| S29GL032M10TAIR33 | Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 680uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 6.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-40; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR |
| S29GL032M10TAIR40 | CAP 1.0UF 500V 10% X7R RAD-.475 .570X.500 CONF BULK |
| S29GL032M10TAIR43 | CAP TANT 220UF 2.5V 20% POLY SMD |
| S29GL032M10FBCR33 | MirrorBit Flash Family |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032M10TAIR30 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10TAIR40 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL032M10TAIR42 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 100NS 48TSOP - Tape and Reel |
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