參數(shù)資料
型號(hào): S29GL032M10FBCR33
廠商: Spansion Inc.
英文描述: MirrorBit Flash Family
中文描述: MirrorBit閃存系列
文件頁數(shù): 20/159頁
文件大?。?/td> 5216K
代理商: S29GL032M10FBCR33
116
S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
Data s he et
Figure 7. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress
or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence.
Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor
to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in the erase-
suspend-read mode. Table 37 on page 120 shows the outputs for RY/BY#.
DQ7 = Data?
Yes
No
DQ5 = 1?
No
Yes
FAIL
PASS
Read DQ15–DQ0
Addr = VA
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
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