• 參數(shù)資料
    型號(hào): S29GL032A30TFI013
    廠商: Spansion Inc.
    英文描述: 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
    中文描述: 64兆,32兆和16兆位3.0伏只頁面模式閃存,含有200納米MirrorBit工藝技術(shù)
    文件頁數(shù): 87/95頁
    文件大小: 2389K
    代理商: S29GL032A30TFI013
    September 10, 2007 S29GL-A_00_A11
    S29GL-A
    87
    D a t a
    S h e e t
    17. Erase And Programming Performance
    Notes
    1. Typical program and erase times assume the following conditions: 25
    °
    C, V
    CC
    = 3.0V, 10,000 cycles; checkerboard data pattern.
    2. Under worst case conditions of 90
    °
    C; Worst case V
    CC
    , 100,000 cycles.
    3. Effective programming time (typ) is 15
    μ
    s (per word), 7.5
    μ
    s (per byte).
    4. Effective accelerated programming time (typ) is 12.5
    μ
    s (per word), 6.3
    μ
    s (per byte).
    5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
    6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
    7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
    Table 10.2 on page 61
    and
    Table 10.1 on page 62
    for further information on command definitions.
    Notes
    1. Sampled, not 100% tested.
    2. Test conditions T
    A
    = 25°C, f = 1.0 MHz.
    Parameter
    Typ
    (Note 1)
    Max
    (Note 2)
    Unit
    Comments
    Sector Erase Time
    0.5
    3.5
    sec
    Excludes 00h
    programming prior
    to erasure
    (Note 6)
    Chip Erase Time
    S29GL016A
    17.5
    35
    S29GL032A
    32
    64
    S29GL064A
    64
    128
    Total Write Buffer Program Time (Notes
    3
    ,
    5
    )
    240
    μs
    Excludes system
    level overhead
    (Note 7)
    Total Accelerated Effective Write Buffer Program Time (Notes
    4
    ,
    5
    )
    200
    Chip Program Time
    S29GL016A
    16
    sec
    S29GL032A
    31.5
    S29GL064A
    63
    Table 17.1
    TSOP Pin and BGA Package Capacitance
    Parameter Symbol
    Parameter Description
    Test Setup
    Typ
    Max
    Unit
    C
    IN
    Input Capacitance
    V
    IN
    = 0
    TSOP
    6
    7.5
    pF
    BGA
    4.2
    5.0
    pF
    C
    OUT
    Output Capacitance
    V
    OUT
    = 0
    TSOP
    8.5
    12
    pF
    BGA
    5.4
    6.5
    pF
    C
    IN2
    Control Pin Capacitance
    V
    IN
    = 0
    TSOP
    7.5
    9
    pF
    BGA
    3.9
    4.7
    pF
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