參數(shù)資料
型號： S29GL032A30TAI013
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述： 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術
文件頁數(shù)： 70/95頁
文件大?。?/td> 2389K
代理商： S29GL032A30TAI013
70
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
13. DC Characteristics
13.1
CMOS Compatible
Notes
1. On the WP#/ACC pin only, the maximum input load current when WP# = V
IL
is ± 5.0 μA.
2. The I
CC
current listed is typically less than 3.5 mA/MHz, with OE# at V
IH
.
3. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
4. I
CC
active while Embedded Erase or Embedded Program is in progress.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns.
6. V
CC
voltage requirements.
7. Not 100% tested.
Parameter
Symbol
Parameter Description (Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
(Note 1)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, ACC Input Load Current
V
= V
CC max
; A9
= 12.5 V
-40°C to 0°C
250
μA
0°C to 85°C
35
I
LR
Reset Leakage Current
V
CC
= V
CC max
; RESET# = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Initial Read Current (Notes
2
,
3
)
CE# = V
IL,
OE# =
V
IH
,
1 MHz
5
20
mA
5 MHz
18
25
10 MHz
35
50
I
CC2
V
Intra-Page Read Current
(Notes
2
,
3
)
CE# = V
IL,
OE# =
V
IH
10 MHz
5
20
mA
40 MHz
10
40
I
CC3
V
CC
Active Write Current
(Note 3)
CE# = V
IL,
OE# = V
IH
CE#, RESET# = V
CC
±
0.3 V,
WP# = V
IH
RESET# = V
SS
±
0.3 V, WP# = V
IH
V
= V
CC
±
0.3 V;
-0.1< V
IL
≤
0.3 V, WP# = V
IH
50
60
mA
I
CC4
V
CC
Standby Current
(Note 3)
1
5
μA
I
CC5
V
CC
Reset Current
(Note 3)
1
5
μA
I
CC6
Automatic Sleep Mode (Notes
3
,
5
)
1
5
μA
V
IL
Input Low Voltage 1
(Note 6)
–0.5
0.8
V
V
IH
Input High Voltage 1
(Note 6)
0.7 V
CC
V
CC
+ 0.5
V
V
HH
Voltage for ACC Program
Acceleration
V
CC
= 2.7 –3.6 V
11.5
12.0
12.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 2.7 –3.6 V
11.5
12.0
12.5
V
V
OL
Output Low Voltage
(Note 6)
I
OL
= 4.0 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
V
LKO
Low V
CC
Lock-Out Voltage
(Note 7)
2.3
2.5
V
相關PDF資料
PDF描述
S29GL032A30TAIR10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032M10BAIR63 MirrorBit Flash Family
S29GL032M10BFIR50 MirrorBit Flash Family
S29GL032M10FBCR50 MirrorBit Flash Family
S29GL064N11FFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關代理商/技術參數(shù)
參數(shù)描述
S29GL032A30TAIR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAIR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*