參數(shù)資料
型號(hào): S29GL032A30TAI012
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述: 64兆,32兆和16兆位3.0伏只頁(yè)面模式閃存,含有200納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù): 64/95頁(yè)
文件大?。?/td> 2389K
代理商: S29GL032A30TAI012
64
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
Figure 10.3
Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 =
1
because DQ7 may change simultaneously with DQ5.
10.5
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in
the erase-suspend-read mode.
Table 10.2 on page 68
shows the outputs for RY/BY#.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ15–DQ0
Addr = VA
Read DQ15–DQ0
Addr = VA
DQ7 = Data
START
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