參數(shù)資料
型號(hào)： S29GL032A30TAI010
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述： 64兆，32兆和16兆位3.0伏只頁(yè)面模式閃存，含有200納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù)： 68/95頁(yè)
文件大?。?/td> 2389K
代理商： S29GL032A30TAI010
68
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
10.11 DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1 produces a
1
.
The system must issue the Write-to-Buffer-Abort-Reset command sequence to return the device to reading
array data. See
Write Buffer
on page 24
for more details.
Notes
1. DQ5 switches to
1
when an Embedded Program, Embedded Erase, or Write-to-Buffer operation exceeded the maximum timing limits.
Refer to
DQ5: Exceeded Timing Limits on page 67
for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to
1
when the device aborts the write-to-buffer operation.
Table 10.2
Write Operation Status
Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ1
RY/BY#
Standard Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
N/A
0
Program Suspend Mode
Program-
Suspend
Read
Program-Suspended
Sector
Invalid (not allowed)
1
Non-Program
Suspended Sector
Data
1
Erase Suspend Mode
Erase-
Suspend
Read
Erase-Suspended Sector
1
No toggle
0
N/A
Toggle
N/A
1
Non-Erase Suspended
Sector
Data
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Write-to-
Buffer
Busy
(Note 3)
DQ7#
Toggle
0
N/A
N/A
0
0
Abort
(Note 4)
DQ7#
Toggle
0
N/A
N/A
1
0
相關(guān)PDF資料
PDF描述
S29GL032A30TAI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAI013 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAIR10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032M10BAIR63 MirrorBit Flash Family
S29GL032M10BFIR50 MirrorBit Flash Family
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A30TAI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAIR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAIR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30TAIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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