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參數(shù)資料
| 型號： | S29GL032A100BAIR23 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 60/95頁 |
| 文件大?。?/td> | 2389K |
| 代理商： | S29GL032A100BAIR23 |
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60
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
10.1
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected for erasure. This command is valid only during the
sector erase operation, including the 50 μs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during the sector erase operation, the device requires a typical
of 5
μ
s
(
maximum of 20
μ
s) to suspend the erase operation. However, when the Erase Suspend command is
written during the sector erase time-out, the device immediately terminates the time-out period and suspends
the erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The system can
read data from or program data to any sector not selected for erasure. (The device
erase suspends
all
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status
information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to
Write Operation Status
on page 63
for information on these
status bits.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just
as in the standard word program operation. Refer to
Write Operation Status
on page 63
for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to
Autoselect Mode
on page 40
and
Autoselect Command Sequence
on page 53
sections for details.
To resume the sector erase operation, the system must write the Erase Resume command. Further writes of
the Resume command are ignored. Another Erase Suspend command can be written after the chip resumes
erasing.
Note
During an erase operation, this flash device performs multiple internal operations which are invisible to the
system. When an erase operation is suspended, any of the internal operations that were not fully completed
must be restarted. As such, if this flash device is continually issued suspend/resume commands in rapid
succession, erase progress is impeded as a function of the number of suspends. The result is a longer
cumulative erase time than without suspends. Note that the additional suspends do not affect device reliability
or future performance. In most systems rapid erase/suspend activity occurs only briefly. In such cases, erase
performance is not significantly impacted.
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PDF描述 |
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| S29GL032A100BFI010 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100BFI012 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100BFI013 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100BFIR10 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100BFIR12 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032A100BFI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100BFI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100BFI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100BFIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100BFIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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