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參數(shù)資料
| 型號(hào)： | S29GL01GP90FFIV12 |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 3.0伏只頁(yè)面模式閃存具有90納米MirrorBit工藝技術(shù) |
| 文件頁(yè)數(shù)： | 33/77頁(yè) |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL01GP90FFIV12 |
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November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
33
D a t a
S h e e t
( P r e l i m i n a r y )
7.7.5
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. The sector address is required when writing this
command. This command is valid only during the sector erase operation, including the minimum t
SEA
time-out
period during the sector erase command sequence. The Erase Suspend command is ignored if written during
the chip erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of 20
μs (5
μs typical) to suspend the erase operation. However, when the Erase Suspend
command is written during the sector erase time-out, the device immediately terminates the time-out period
and suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system
can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status
information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to
Table 7.35
for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the program operation using write operation status bits, just as
in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to
Write Buffer Programming
on page 26
and the
Autoselect
on page 21
for details.
To resume the sector erase operation, the system must write the Erase Resume command. The address of
the erase-suspended sector is required when writing this command. Further writes of the Resume command
are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
Software Functions and Sample Code
The following is a C source code example of using the erase suspend function. Refer to the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase suspend command */
*( (UINT16 *)base_addr ) = 0x00B0; /* write suspend command */
The following is a C source code example of using the erase resume function. Refer to the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase resume command */
*( (UINT16 *)sector_addr ) = 0x0030; /* write resume command */
/* The flash needs adequate time in the resume state */
Table 7.10
Erase Suspend
(LLD Function = lld_EraseSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Base + XXXh
Base + XXXh
00B0h
Table 7.11
Erase Resume
(LLD Function = lld_EraseResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Sector Address
Sector Address
0030h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP90TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90TAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90TAIR12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90TAIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP90TAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90TAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90TAIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90TAIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90TAIV10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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