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參數(shù)資料
| 型號： | S29GL01GP90FAIV10 |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 3.0伏只頁面模式閃存具有90納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 27/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL01GP90FAIV10 |
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November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
Flash Family
27
D a t a
S h e e t
( P r e l i m i n a r y )
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to
READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”
during the “write buffer data loading” stage of the operation.
Writing anything other than the
Program to Buffer Flash
Command after the specified number of “data
load” cycles.
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “l(fā)ast address location loaded”), DQ6 =
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-to-
Buffer-Abort reset” command sequence is required when using the write buffer Programming features in
Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices
are capable of handling multiple write buffer programming operations on the same write buffer address range
without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
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| S29GL128P11FFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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| S29GL128P11FFIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP90FAIV12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90FFI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90FFI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90FFIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP90FFIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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