參數(shù)資料
型號: S29CL032J1MFAN120
廠商: SPANSION LLC
元件分類: PROM
英文描述: 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
封裝: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁數(shù): 73/78頁
文件大小: 1825K
代理商: S29CL032J1MFAN120
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
73
Pr el im i n a r y
21 Revision Summary
Revision A (March 1, 2005)
Initial release.
Revision A1 (April 15, 2005)
Ordering Information and Valid Combinations tables
Updated to include lead (Pb)-free options
Rev A2 (January 20, 2006)
Ordering Information
Added "Contact factory" for 75 MHz
Modified Ordering Options for Characters 15 & 16 to reflect autoselect ID & top/bottom boot.
Changed “N” for Extended Temperature Range to “M”.
Input/Output Descriptions
Removed Logic Symbol Diagrams
Additional Resources
Added Additional Resources section
Memory Address Map
Changed "Bank 2" to "Bank 1"
Simultaneous Read/Write Operation
Removed Ordering Options Table (Tables 3 & 4)
Advanced Sector Protection/Unprotection
Added Figure: Advanced Sector Protection/Unprotection
Added Figures for PPB Erase & Program Algorithm
Electronic Marking
Added in Electronic Marking section
Absolute Maximum Ratings
Modified VCC Ratings to reflect 2.6 V and 3.6 V devices
Modified VCC Ratings to reflect 16 Mb & 32 Mb devices
AC Characteristics
Added Note "tOE during Read Array"
Table: Asynchronous Read Operation
Changed values of tAVAV, tAVQV, tELQV, tGLQV
Figure: Conventional Read Operation Timings
Moved tDF line to 90% on the high-Z output
Table: Burst Mode Read for 32 Mb & 16 Mb
Added tAAVS and tAAVH timing parameters.
Changed tCH to tCLKH
Changed tCL to tCLKL
Removed the following timing parameters
tDS (Data Setup to WE# Rising Edge)
相關PDF資料
PDF描述
S29CL032J0PQAN102 1M X 32 FLASH 3.3V PROM, 54 ns, PQFP80
S29GL016A10FAI020 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
S29GL032A10TAIR10 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR12 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
S29GL032A10TAIR13 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
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