- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄192296 > S29CL032J0RFFI110 (SPANSION LLC) 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 PDF資料下載
參數(shù)資料
| 型號： | S29CL032J0RFFI110 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80 |
| 文件頁數(shù)： | 74/78頁 |
| 文件大?。?/td> | 1825K |
| 代理商： | S29CL032J0RFFI110 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁當(dāng)前第74頁第75頁第76頁第77頁第78頁
74
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
Prel imi n ary
tDH (Data Hold from WE# Rising Edge)
tAS (Address Setup to Falling Edge of WE#)
tAH (Address Hold from Falling Edge of WE#)
tCS (CE# Setup Time)
tCH (CE# Hold Time)
tACS (Address Setup Time to CLK)
tACH (Address Hold Time from ADV# Rising Edge of CLK while ADV# is Low)
Figure: Burst Mode Read (x32 Mode)
Added the following timing parameters
tAAVS
tDVCH
tINDS
tINDH
Figure: Asynchronous Command Write Timing
Changed tOEH to tWEH
Change tWPH to tOEP
Figure: Synchronous Command Write/Read Timing
Removed tWADVH and tWCKS
Figure: WP# Timing
Changed tCH to tBUSY
Table: Erase/Program Operations
Added Note 3: Program/Erase parameters are the same regardless of synchronous or asynchro-
nous mode.
Add tOEP (OE High Pulse)
Alternative CE# Controlled Erase/Program Operations
Removed tOES
Added tWADVS and tWCKS
Appendix 2: Command Definitions
Removed "or when device is in autoselect mode" from Note 14
Rev B0 (June 12, 2006)
Global
Changed document status to Preliminary.
Distinctive Characteristics
Changed cycling endurance from typical to guaranteed.
Performance Characteristics
Updated Max Asynch. Access Time, Max CE# Access Time, and Max OE# Access time in table.
Ordering Information
Updated additional ordering options in designator breakout table. Updated valid combination
tables.
Input/Output Descriptions and Logic Symbols
Changed RY/BY# description.
Physical Dimensions/Connection Diagrams
Changed note on connection diagrams.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29CL032J0RFFN130 | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| S29CL032J1JFAI110 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J1MFAN120 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0PQAN102 | 1M X 32 FLASH 3.3V PROM, 54 ns, PQFP80 |
| S29GL016A10FAI020 | 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL016A | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。