參數(shù)資料
型號(hào)： S29AL032D90TFI042
廠商： Spansion Inc.
英文描述： 32 Megabit CMOS 3.0 Volt-only Flash Memory
中文描述： 32兆位的CMOS 3.0伏只閃存
文件頁(yè)數(shù)： 39/69頁(yè)
文件大?。?/td> 1970K
代理商： S29AL032D90TFI042
42
S29AL032D
S29AL032D_00_A3 June 13, 2005
Advan ce
In form ati o n
tion. Figure 22, on page 57 shows the toggle bit timing diagram. Figure 23, on page 58 shows
the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7, on page 43 for the following discussion. Whenever the system initially begins
reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after
the first read. After the second read, the system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device has completed the program or erase
operation. The system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still tog-
gling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If
it is, the system should then determine again whether the toggle bit is toggling, since the toggle
bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the
device has successfully completed the program or erase operation. If it is still toggling, the device
did not complete the operation successfully, and the system must write the reset command to
return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and
DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through suc-
cessive read cycles, determining the status as described in the previous paragraph. Alternatively,
it may choose to perform other system tasks. In this case, the system must start at the beginning
of the algorithm when it returns to determine the status of the operation (top of Figure 7, on page
相關(guān)PDF資料
PDF描述
S29AL032D90TFI043 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29CD016G0JDEI004 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
S29CD016G0JDEI007 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
S29CD032J1JFAI122 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
S29CD032J1MFAN120 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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S29AS008J70BFI032 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays
S29AS008J70BFI042 制造商:Spansion 功能描述:8 MEG CMOS 1.8 VOLT-ONLY BOOT SECTOR FLASH MEMORY - Trays
S29AS008J70TFI030 功能描述:閃存 8Mb 1.8V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29AS008J70TFI040 功能描述:閃存 8Mb 1.8V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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