參數(shù)資料
型號(hào)： S29AL032D70BAE000
廠商： Spansion Inc.
英文描述： 32 Megabit CMOS 3.0 Volt-only Flash Memory
中文描述： 32兆位的CMOS 3.0伏只閃存
文件頁(yè)數(shù)： 30/69頁(yè)
文件大?。?/td> 1970K
代理商： S29AL032D70BAE000
34
S29AL032D
S29AL032D_00_A3 June 13, 2005
Advan ce
In form ati o n
NOTE: See Table 17 for program command sequence.
Figure 4. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing
two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The
device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these oper-
ations. Table 17 on page 38 shows the address and data requirements for the chip erase
command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that
a hardware reset during the chip erase operation immediately terminates the operation. The
Chip Erase command sequence should be reinitiated once the device has returned to reading
array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#.
See Write Operation Status on page 39 for information on these status bits. When the Embedded
Erase algorithm is complete, the device returns to reading array data and addresses are no longer
latched.
Figure 5, on page 36 illustrates the algorithm for the erase operation. See Erase/Program
Operations on page 54 for parameters, and to Figure 19, on page 56 for timing diagrams.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
相關(guān)PDF資料
PDF描述
S29AL032D70BAE002 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29AL032D90TFI042 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29AL032D90TFI043 32 Megabit CMOS 3.0 Volt-only Flash Memory
S29CD016G0JDEI004 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
S29CD016G0JDEI007 512K X 32 FLASH 2.7V PROM, 67 ns, UUC76
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29AL032D70BAI000 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray
S29AL032D70BAI030 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA Tray
S29AL032D70BAI032 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 70ns 48-Pin FBGA T/R
S29AL032D70BFI000 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29AL032D70BFI030 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*