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參數(shù)資料
| 型號： | S29AL016D90TFI023 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DDD, TSOP-48 |
| 文件頁數(shù)： | 1/58頁 |
| 文件大?。?/td> | 1037K |
| 代理商： | S29AL016D90TFI023 |
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Publication Number
S29AL016D_00
Revision
A
Amendment
2
Issue Date
December 17, 2004
PRELIMINARY
S29AL016D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantages
Single pow er supply operation
— Full voltage range: 2.7 to 3.6 volt read and write op-
erations for battery-powered applications
Manufactured on 200nm process technology
— Fully compatible with 0.23 μm Am29LV160D and
MBM29LV160E devices
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-
one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and thirty-
one 32 Kword sectors (word mode)
Sector Protection features
— A hardware method of locking a sector to prevent any
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Top or bottom boot block configurations
available
Compatibility w ith J EDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
Performance Characteristics
High performance
— Access times as fast as 70 ns
Ultra low pow er consumption ( typical values
at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
Cycling endurance: 1,000,000 cycles per
sector typical
Data retention: 20 years typical
Package Options
48-ball FBGA
48-pin TSOP
44-pin S OP
S oftw are Features
CFI ( Common Flash I nterface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
Erase Suspend/ Erase R esume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardw are Features
Ready/ Busy# pin ( R Y / BY # )
— Provides a hardware method of detecting program or
erase cycle completion
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL016M90FFI023 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M10 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M10BAI010 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M10BAI012 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL016J | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL016J55BFIR10 | 制造商:Spansion 功能描述:FLASH MEM PARALLEL 3.3V 16M-BIT 2M X 8/1M X 16 55NS TRAY - Trays |
| S29AL016J55BFNR10 | 制造商:Spansion 功能描述:FLASH MEM PARALLEL 3.3V 16M-BIT 2M X 8/1M X 16 55NS TRAY - Trays |
| S29AL016J55TFIR10 | 功能描述:閃存 16Mb 3V 55ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29AL016J55TFIR20 | 功能描述:閃存 16M 3V 55ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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