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參數(shù)資料
| 型號： | S29AL016D90MFI020 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 |
| 封裝： | 28.20 X 13.30 MM, LEAD FREE, MO-180AAA, SOP-44 |
| 文件頁數(shù)： | 53/58頁 |
| 文件大小： | 1037K |
| 代理商： | S29AL016D90MFI020 |
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December 17, 2004 S29AL016D_00_A2
S29AL016D
53
P r e l i m i n a r y
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0 V, 100,000 cycles, checkerboard
2. Under worst case conditions of 90°C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See
Table 9
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP and BGA Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (
Note 1
)
Max (
Note 2
)
Unit
Comments
Sector Erase Time
0.7
10
s
Excludes 00h programming
prior to erasure (
Note 4
)
Chip Erase Time
25
s
Byte Programming Time
5
150
μs
Excludes system level
overhead (
Note 5
)
Word Programming Time
7
210
μs
Chip Programming Time
(
Note 3
)
Byte Mode
11
33
s
Word Mode
7.2
21.6
s
Parameter
Symbol
Parameter Description
Test Setup
Package
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
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