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參數(shù)資料
| 型號(hào)： | S29AL016D90MAI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| 中文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO44 |
| 封裝： | 28.20 X 13.30 MM, MO-180AAA, SOP-44 |
| 文件頁數(shù)： | 19/58頁 |
| 文件大?。?/td> | 1037K |
| 代理商： | S29AL016D90MAI010 |
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December 17, 2004 S29AL016D_00_A2
S29AL016D
19
P r e l i m i n a r y
Table 6. System Interface String
Addresses
( W ord Mode)
Addresses
( Byte Mode)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N
μs
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
μs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
44h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0000h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 7. Device Geometry Definition
Addresses
( W ord Mode)
Addresses
( Byte Mode)
Data
Description
27h
4Eh
0015h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0000h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
0001h
0000h
0020h
0000h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0080h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
001Eh
0000h
0000h
0001h
Erase Block Region 4 Information
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| S29AL016D90MAI013 | 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016D90MAI020 | 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016D90MAI023 | 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016D90MFI010 | 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL016D90MAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016D90MAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 44SOP - Rail/Tube |
| S29AL016D90MAI021 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 44SOP - Rail/Tube |
| S29AL016D90MAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016D90MFI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
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