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參數(shù)資料
| 型號： | S29AL016D70TFI023 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| 中文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DDD, TSOP-48 |
| 文件頁數(shù)： | 32/58頁 |
| 文件大?。?/td> | 1037K |
| 代理商： | S29AL016D70TFI023 |
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32
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular
sector is actively erasing (that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit II is valid after the rising
edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have
been selected for erasure. (The system may use either OE# or CE# to control the
read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or
is erase-suspended. DQ6, by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected
for erasure. Thus, both status bits are required for sector and mode information.
Refer to
Table 10
to compare outputs for DQ2 and DQ6.
Figure 6
shows the toggle bit algorithm in flowchart form, and the section
Reading
Toggle Bits DQ6/DQ2
explains the algorithm. See also the
DQ6: Toggle Bit I
sub-
section.
Figure 20
shows the toggle bit timing diagram.
Figure 21
shows the
differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to
Figure 6
for the following discussion. Whenever the system initially be-
gins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the system would note and
store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit with the first. If the toggle
bit is not toggling, the device has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle
bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer toggling, the device has suc-
cessfully completed the program or erase operation. If it is still toggling, the
device did not complete the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit
is toggling and DQ5 has not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as de-
scribed in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algo-
rithm when it returns to determine the status of the operation (top of
Figure 6
).
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相關(guān)代理商/技術(shù)參數(shù) |
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| S29AL016D70TFN020 | 制造商:Spansion 功能描述: |
| S29AL016D90BAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016D90BAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016D90BAI020 | 制造商:Spansion 功能描述: |
| S29AL016D90BAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 MEGABIT CMOS 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
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