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參數(shù)資料
| 型號： | S29AL004D70TFI022 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | FLASH 3V PROM, PDSO48 |
| 封裝： | LEAD FREE, TSOP-48 |
| 文件頁數(shù)： | 28/55頁 |
| 文件大小： | 1481K |
| 代理商： | S29AL004D70TFI022 |
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26
S29AL004D
S29AL004D_00_A1 February 18, 2005
A d v a n c e I n f o r m a t i o n
Write Operation Status
The device provides several bits to determine the status of a write operation:
DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#.
Table 6 on page 31
and the following
subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each
offer a method for determining whether a program or erase operation is complete
or in progress. These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Algorithm is in progress or completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final WE# pulse in the program
or erase command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the com-
plement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a pro-
gram address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 μs, then the device returns to reading array data.
During the Embedded Erase algorithm, Data# Polling produces a
0
on DQ7. When
the Embedded Erase algorithm is complete, or if the device enters the Erase Sus-
pend mode, Data# Polling produces a
1
on DQ7. This is analogous to the
complement/true datum output described for the Embedded Program algorithm:
the erase function changes all the bits in a sector to
1
; prior to this, the device
outputs the
complement
, or
0
. The system must provide an address within any
of the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 μs, then the
device returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
When the system detects DQ7 has changed from the complement to true data,
it can read valid data at DQ7–DQ0 on the
following
read cycles. This is because
DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is
asserted low.
Figure 19, on page 44
, Data# Polling Timings (During
Embedded Algorithms), in
AC Characteristics on page 37
illustrates this.
Table 6 on page 31
shows the outputs for Data# Polling on DQ7.
Figure 5, on
page 27
shows the Data# Polling algorithm.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| S29AL004D70TFI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D90BAI020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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