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參數(shù)資料
| 型號： | S2386-5K |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | TO-5, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 800K |
| 代理商： | S2386-5K |
Si photodiodes
For visible to IR, general-purpose photometry
S2386 series
www.hamamatsu.com
1
Features
Applications
Analytical instruments
High sensitivity
Optical measurement equipment
Low dark current
High reliability
Superior linearity
General ratings / Absolute maximum ratings
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Dimensional
outline/
Window material *
Package
Active
area size
Effective
active area
Absolute maximum ratings
Reverse voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
(mm)
(mm2)
(V)
(°C)
S2386-18K
/K
TO-18
1.1 × 1.1
1.2
30
-40 to +100
-55 to +125
S2386-18L
/L
S2386-5K
/K
TO-5
2.4 × 2.4
5.7
S2386-44K
3.6 × 3.6
13
S2386-45K
/K
3.9 × 4.6
17.9
S2386-8K
/K
TO-8
5.8 × 5.8
33
S2386-14(X)
/K
Type No.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photo sensitivity
S
(A/W)
Short
circuit
current
Isc
100 lx
Dark
current
ID
VR=
10 mV
Max.
Temp.
coefcient
of ID
TCID
Rise time
tr
VR=0 V
RL=1 k
Ω
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
VR=0 V
λ=λp
λp
GaP
LED
560
nm
He-Ne
laser
633
nm
GaAs
LED
930
nm
(nm)
Min.
(μA)
Typ.
(μA) (pA) (times/°C)
(μs)
(pF)
Min.
(G
Ω)
Typ.
(G
Ω) (W/Hz1/2)
S2386-18K
320 to
1100
960
0.6 0.38 0.43 0.59
1
1.3
2
1.12
0.4
140
5
100 6.8 × 10-16
S2386-18L
4
5.7
S2386-5K
4.4 6.0
5
1.8
730
2
50
9.6 × 10-16
S2386-44K
9.6
12
20
3.6
1600
0.5
25
1.4 × 10-15
S2386-45K
12
17
30
5.5
2300
0.3
S2386-8K
26
33
50
10
4300
0.2
10
2.1 × 10-15
S2386-14(X)
* Window material K: borosilicate glass, L: lens type borosilicate glass
PRELIMINARY
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