參數(shù)資料
型號： S2004DS1
元件分類： 晶閘管
英文描述： 4 A, 200 V, SCR, TO-252
封裝： DPAK-3
文件頁數(shù)： 7/11頁
文件大?。?/td> 118K
代理商： S2004DS1
Data Sheets
Sensitive SCRs
2004 Teccor Electronics
E5 - 5
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
Electrical Specifications Notes
(1)
See Figure E5.1 through Figure E5.9 for current ratings at
specified operating temperatures.
(2)
See Figure E5.10 for IGT versus TC or TL.
(3)
See Figure E5.11 for instantaneous on-state current (iT) versus on-
state voltage (vT) TYP.
(4)
See Figure E5.12 for VGT versus TC or TL.
(5)
See Figure E5.13 for IH versus TC or TL.
(6)
For more than one full cycle, see Figure E5.14.
(7)
0.8 A to 4 A devices also have a pulse peak forward current on-
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 s minimum,
15 s maximum. See Figure E5.20 and Figure E5.21.
(8)
See Figure E5.15 for tgt versus IGT.
(9)
Test conditions as follows:
– TC or TL
≤80 °C, rectangular current waveform
– Rate-of-rise of current
≤10 A/s
– Rate-of-reversal of current
≤5A/s
– ITM = 1 A (50 s pulse), Repetition Rate = 60 pps
– VRRM = Rated
– VR = 15 V minimum, VDRM = Rated
– Rate-of-rise reapplied forward blocking voltage = 5 V/s
– Gate Bias = 0 V, 100
(during turn-off time interval)
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2 APK; T106/T107 devices are 4 APK.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) VD = 6 V dc, RL = 100
(See Figure E5.19 for simple test circuit
for measuring gate trigger voltage and gate trigger current.)
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
temperature at maximum rated current.
(14) IGT = 500 A maximum at TC = -40 °C for T106 devices
(15) IH = 10 mA maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(16) IH = 6 mA maximum at TC = -40 °C for T106 devices
(17) Pulse Width
≤10 s
(18) IGT = 350 A maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(19) Latching current can be higher than 20 mA for higher IGT types.
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
(20) TC or TL = TJ for test conditions in off state
(21) IDRM and IRRM = 50 A for 2N5064 and 100 A for 2N6565 at
125 °C
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) TC = 110 °C
VGT
IH
IGM
VGRM
PGM
PG(AV)
ITSM
dv/dt
di/dt
tgt
tq
l2t
(4) (12) (22)
Volts
(5) (19)
mAmps
(17)
Amps
Volts
(17)
Watts
(6) (13)
Amps
Volts/Sec
Amps/Sec
(8)
Sec
(9)
Sec
Amps2Sec
TC =
-40 °C
TC =
25 °C
TC =
110 °C
TC = 110 °C
MAX
MIN
60/50 Hz
TYP
MAX
1
0.8
0.25
6
1
6
1
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8
1
6
1
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
6161
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6161
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6161
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8161
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8161
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8161
0.1
100/83
8
100
5
45
41
1
0.8
0.25
6
1
6
1
0.1
100/83
10
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
6
1
6
1
0.1
100/83
8
100
4
50
41
1
0.8
0.25
8
1
6
1
0.1
100/83
10
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
1
0.8
0.25
8
1
6
1
0.1
100/83
8
100
5
45
41
相關PDF資料
PDF描述
S2004VS1 4 A, 200 V, SCR, TO-251
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S2006DS3 6 A, 200 V, SCR, TO-252
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相關代理商/技術參數(shù)
參數(shù)描述
S2004DS1RP 功能描述:SCR 40A 200V Sensing RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S2004DS1TP 功能描述:SCR 40A 200V Sensing RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S2004DS2 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Sensitive SCRs
S2004DS2RP 功能描述:SCR 40A 200V Sensing RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
S2004DS2TP 功能描述:SCR 40A 200V Sensing RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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