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參數(shù)資料
| 型號(hào)： | S1L58152 |
| 廠商： | 愛(ài)普生（中國(guó)）有限公司 |
| 英文描述： | HIGH DENSITY GATE ARRAY |
| 中文描述： | 高密度門(mén)陣列 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 105K |
| 代理商： | S1L58152 |
3
DATA SHEET
EPSON ELECTRONICS AMERICA, INC.
i
150 River Oaks Pkwy
i
San Jose, CA 95134
i
Tel: (408) 922-0200
i
Fax: (408) 922-0238
ASIC
S1L50000
ELECTRICAL CHARACTERISTICS AND SPECIFICATIONS
Absolute Maximum Ratings (For Single Power Supply):
(V
ss
= 0V)
Item
Symbol
Limits
Unit
Power Supply Voltage
Input Voltage
Output Voltage
Output Current/Pin
Storage Temperature
*
1: Possible to use from -0.3V to 7.5V of I/O buffer voltage in the open-drain systems and input buffer in the IDC and IDH
systems.
V
DD
V
I
V
O
I
OUT
T
STG
-0.3 to 4.0
-0.3 to V
DD
+ 0.5
*1
-0.3 to V
DD
+ 0.5
*1
±
30
-65 to 150
V
V
V
mA
°
C
Absolute Maximum Ratings (For Dual Power Supplies):
(V
ss
= 0V)
Item
Symbol
Limits
Unit
HV
DD
-0.3 to 7.0
V
Power Supply Voltage
LV
DD
-0.3 to 4.0
-0.3 to HV
DD
+ 0.5
*1
-0.3 to LV
DD
+ 0.5
*1
-0.3 to HV
DD
+ 0.5
*1
-0.3 to LV
DD
+ 0.5
*1
±
30 (
±
50
*2
)
-65 to 150
V
HV
I
V
Input Voltage
LV
I
V
HV
O
V
Output Voltage
LV
O
V
Output Current/Pin
Storage Temperature
**
1: Possible to use from -0.3V to 7.5V of I/O buffer voltage in the open-drain systems and input buffer in the IDC and IDH
systems.
*2: Possible to use for 24mA of output buffer.
I
OUT
T
STG
mA
°
C
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| S1L58153 | HIGH DENSITY GATE ARRAY |
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| S1L50283 | HIGH DENSITY GATE ARRAY |
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參數(shù)描述 |
|---|---|
| S1L58153 | 制造商:EPSON 制造商全稱(chēng):EPSON 功能描述:HIGH DENSITY GATE ARRAY |
| S1L58154 | 制造商:EPSON 制造商全稱(chēng):EPSON 功能描述:HIGH DENSITY GATE ARRAY |
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