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參數(shù)資料
| 型號： | S1L51253 |
| 廠商： | 愛普生（中國）有限公司 |
| 英文描述： | HIGH DENSITY GATE ARRAY |
| 中文描述： | 高密度門陣列 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 105K |
| 代理商： | S1L51253 |
8
EPSON ELECTRONICS AMERICA, INC.
i
150 River Oaks Pkwy
i
San Jose, CA 95134
i
Tel: (408) 922-0200
i
Fax: (408) 922-0238
ASIC
S1L50000
DATA SHEET
Electrical Characteristics of the
S1L50000
Series:
(V
DD
= 2.0V
±
0.2V, V
SS
= 0V, T
a
= -40 to 85
°
C)
Item
Symbol
I
DDS
I
LI
I
OZ
V
OH
Conditions
Min
--
-1
-1
V
DD
-0.2
Typ
--
--
--
--
Max
150
1
1
--
Unit
μ
A
μ
A
μ
A
V
Quiescent Current
*
Input Leakage Current
Off State Leakage Current
High Level Output Voltage
Quiescent Conditions
--
--
I
OH
= -0.05mA (Type S), -0.3mA
(Type M), -0.6mA (Type 1), -2mA
(Type 2), -4mA (Type 3, Type 4)
V
DD
= Min
I
OL
= 0.05mA (Type S), 0.3mA
(Type M), 0.6mA (Type 1), 2mA
(Type 2), 4mA (Type 3), 8mA
(Type 4)
V
DD
= Min
CMOS Level, V
DD
= Max
CMOS Level, V
DD
= Min
CMOS Schmitt
CMOS Schmitt
CMOS Schmitt
V
I
= 0V
Low Level Output Voltage
V
OL
--
--
0.2
V
High Level Input Voltage
Low Level Input Voltage
High Level Input Voltage
Low Level Input Voltage
Hysteresis Voltage
Pull-up Resistance
V
IH1
V
IL1
V
T1+
V
T1-
V
H1
R
PU
1.6
--
0.4
0.3
0
30
60
30
60
--
--
--
--
--
--
120
240
120
240
--
--
0.3
1.6
1.4
--
300
600
300
600
-2
V
V
V
V
V
Type 1
Type 2
Type 1
Type 2
K
Pull-down Resistance
R
PD
V
I
= V
DD
K
μ
A
High Level Maintenance
Current
Low Level Maintenance
Current
High Level Reversal Current
I
BHH
Bus Hold Response,
V
IN
= 1.6V, V
DD
= Min
Bus Hold Response,
V
IN
= 0.3V, V
DD
= Min
Bus Hold Response,
V
IN
= 0.3V, V
DD
= Max
Bus Hold Response,
V
IN
= 1.6V, V
DD
= Max
f = 1Mhz, V
DD
= 0V
f = 1Mhz, V
DD
= 0V
f = 1Mhz, V
DD
= 0V
I
BHL
--
--
2
μ
A
I
BHHO
-100
--
--
μ
A
Low Level Reversal Current
I
BHLO
100
--
--
μ
A
Input Terminal Capacitance
Output Terminal Capacitance
Input/Output Terminal
Capacitance
The quiescent current is a typical value (T
j
=85
°
C) for each master.
C
I
C
O
C
IO
--
--
--
--
--
--
10
10
10
pF
pF
pF
*
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