參數(shù)資料
型號: S1C60L02F
元件分類: 微控制器/微處理器
英文描述: 4-BIT, MROM, 0.08 MHz, MICROCONTROLLER, PQFP60
封裝: PLASTIC, QFP6-60
文件頁數(shù): 83/102頁
文件大?。?/td> 674K
代理商: S1C60L02F
S1C60N02 TECHNICAL MANUAL
EPSON
73
CHAPTER 6: ELECTRICAL CHARACTERISTICS
Oscillation Characteristics
Oscillation characteristics will vary according to different conditions. Use the
following characteristics are as reference values.
S1C60N02
Unless otherwise specified
VDD=0 V, VSS=-3.0 V, Crystal: Q13MC146, CG=25 pF, CD=built-in, Ta=25°C
6.5
S1C60L02
Unless otherwise specified
VDD=0 V, VSS=-1.5 V, Crystal: Q13MC146, CG=25 pF, CD=built-in, Ta=25°C
*
1 Items enclosed in parentheses ( ) are those used when operating at heavy load
protection mode.
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacity (drain)
Frequency voltage deviation
Frequency IC deviation
Frequency adjustment range
Higher harmonic oscillation
start voltage
Allowable leak resistance
Symbol
Vsta
(Vss)
Vstp
(Vss)
CD
f/V
f/IC
f/CG
Vhho
(Vss)
Rleak
Condition
Min
-1.8
-10
40
200
Typ
20
Unit
V
pF
ppm
V
M
Max
5
10
-3.6
tsta
≤5sec
tstp
≤10sec
Including the parasitic capacity inside the IC
Vss=-1.8 to -3.5V
CG=5–25pF
CG=5pF
Between OSC1 and VDD,
and between VSS and OSC1
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacity (drain)
Frequency voltage deviation
Frequency IC deviation
Frequency adjustment range
Higher harmonic oscillation
start voltage
Allowable leak resistance
Symbol
Vsta
(Vss)
Vstp
(Vss)
CD
f/V
f/IC
f/CG
Vhho
(Vss)
Rleak
Condition
Min
-1.2
-10
40
200
Typ
20
Unit
V
pF
ppm
V
M
Max
5
10
-2.0
tsta
≤5sec
tstp
≤10sec
Including the parasitic capacity inside the IC
Vss=-1.2 to -2.0V (-0.9)
CG=5–25pF
CG=5pF
Between OSC1 and VDD,
and between VSS and OSC1
*1
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