參數(shù)資料
型號(hào)： S1787-08
元件分類(lèi)： 光敏二極管
英文描述： PHOTO DIODE
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 141K
代理商： S1787-08
Si photodiode
S1787 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.:
19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KSPD1038E01
Apr. 2001 DN
ACTIVE AREA
2.8 × 2.4
PHOTOSENSITIVE
SURFACE
(8.5)
8.0
4.5
7.8
6.0
0.8
3.4
±
0.3
1.4
0.3
1.0
2.2
+
0
-0.1
+
0
-0.3
+0
- 0.1
+0
- 0.1
+0.2
- 0.5
0
0.1
0.2
0.3
0.4
0.7
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
(Typ. Ta=25 C)
0.5
0.6
S1787-04
S1787-12
S1787-08
10 ns
100 ns
1 s
10 s
100 s
1 ms
102
103
104
105
LOAD RESISTANCE (
)
RISE
TIME
(Typ. Ta=25 C, VR=0 V)
S1787-12
S1787-04/-08
10 fA
100 fA
1 pA
10 pA
100 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK
CURRENT
(Typ. Ta=25 C)
S1787-12
S1787-04/-08
100 k
1 M
10 M
100 M
1 G
10 T
-20
0
20
40
60
AMBIENT TEMPERATURE (C)
SHUNT
RESISTANCE
80
10 G
100 G
1 T
S1787-04/-08
S1787-12
(Typ. VR=10 mV)
KSPDA0056EA
s Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.15)
KSPDB0124EA
KSPDB0125EA
KSPDB0126EA
s Spectral response
s Dark current vs. reverse voltage
s Rise time vs. load resistance
s Shunt resistance temperature characteristics
KSPDB0127EA
10-16
10-14
10-12
10-10
10-8
100
10-8
10-6
10-4
10-2
100
INCIDENT LIGHT LEVEL (lx)
OUTPUT
CURRENT
(A)
(Typ. Ta=25 C, “A” light source fully illuminated)
102
104
106
108
10-6
10-4
10-2
S1787-08
S1787-04
S1787-12
s Short circuit current linearity
KSPDB0128EA
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